Researchers from Georgia Institute of Technology published a technical paper titled “Open DRAM Model—Part II: Enabling Processing-in-Memory in 3-D DRAM.” Abstract Excerpt: “In this work, we present an “Open DRAM Model” that enables comprehensive circuit-level analysis of DRAM operations across multiple architectures, including conventional 6F2 BCAT, scaled 4F2 VCT, and monolithically stacked 3-D DRAM. ” Find… » read moreRead More
